GaN-Based Power Devices, RF Components, and Chargers for High-Efficiency and Miniaturization

Gallium nitride, or GaN, is very tough and is a stable wide bandgap semiconductor material. Compared to silicon-based devices, gallium nitride based power devices, have found to be better due to their higher breakdown strength, faster switching, higher thermal conductivity and lower conduction resistance. Gallium nitride crystals can grow on different materials, including sapphire, SiC and silicon. If GaN epitaxial layers are grown on silicon, the existing silicon production technology can be used, which does not require expensive specialized manufacturing and allows cheap large silicon wafers to be used.

Gallium nitride is used in the image power devices and manufacturing of semiconductor: RF components, light-emitting diodes high-power etc. Now it is well established that gallium nitride technology can be used for replacing silicon semiconductors technology in the areas of power conversion, radio frequency and analog applications.

Gallium nitride is sometimes known more broadly as a third-generation core material of semiconductors. When compared with silicon, gallium nitride has higher voltages and bandwidths, which allows gallium nitride to be able to generate more streams of electrical current than silicon. In short, for any volume of these two materials, the efficiency of gallium nitride will always be better. If gallium nitride is used replacing all the current electronic devices, perhaps the power consumption of the electronic products would be reduced by another 10% or even 25%. With gallium nitride as the base material of the chargers, more power and less volume can be achieved. Earlier attempts to use gallium nitride materials were undertaken within communication and military industry. Due to development of technology and people's needs, gallium nitride products came into our lives and started occupying space in chargers.

Galium nitride is one of the fast power switching devices around the world at the moment and is able to perform a higher level power switching while it operates at high frequency. It can be used to transfer high intensities but at a smaller transformer